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STMicroelectronics boosts efficiency with new 650 V IGBTs

By Joshua Smalley | July 16, 2015

IGBTs-ST

A figure from a data sheet of the TO-3P, TO-247 and TO-3PF packages of the new 650-V IGBTs from ST.

The new M-series 650 V insulated-gate bipolar transistors (IGBTs) from STMicroelectronics offer designers a  way to increase the efficiency of HVAC motor drives, Uninterruptible Power Supplies, solar power converters and all power-conversion applications working up to 20 kHz in hard-switching circuit topologies.

Built using ST’s third generation of trench-gate field-stop low-loss technology, the M-series IGBTs feature a new trench gate and a specially designed P-N-P vertical structure that together deliver the best trade-off between conduction and switch-off losses and significantly improve the overall performance of the devices. A short-circuit withstand time of 6 µs minimum at 150° C starting junction temperature, the extended maximum operating junction temperature of 175° C, and a wide Safe Operating Area (SOA) extend service lifetime and boost reliability in applications where high power dissipation is required.

Furthermore, the devices are available in packages that include a new generation of free-wheeling diodes optimized for fast recovery whilst maintaining a low forward drop and a high level of softness. This provides excellent EMI protection while reducing switch-on losses. The positive Vce(sat) temperature coefficient, together with tight parameter distribution, enables the devices to be safely paralleled for even higher power requirements.

Key features of the M-series include:

  • 650 V operation, compared to 600 V for most competitive devices
  • low Vce(sat) (1.55 V at 25° C) to minimize conduction losses
  • outstanding robustness, with large SOA and latch-free operation
  • the industry’s best Etot vs Vce(sat) trade-off
  • 175° C maximum operating junction temperature
  • 6 µs of minimum short-circuit withstand capability at high temperature
  • very limited voltage overshoot and no oscillation during switch-off

Complementing ST’s HB series of 650 V IGBTs for higher-frequency industrial applications (up to 60 kHz), the M-series announced today are available in 10 A and 30 A current ratings in a selection of power packages including the TO-220, D2PAK, and TO-247 LL long-lead. All devices are in full production, with pricing starting at $1.00 for the 10 A STGP10M65DF2 in a TO-220 package for orders of 1,000 pieces.

STMicroelectronics
www.st.com/


Filed Under: News, Turbines
Tagged With: stmicroelectronics
 

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