The new HB series of Insulated-Gate Bipolar Transistors (IGBTs) from STMicroelectronics have up to 40% lower turn-off energy losses than competing high-frequency devices, while reducing conduction losses by up to 30%.
The HB series is in mass production now, priced from $2.14 for the STGW30H65FB in quantities of 1,000 units.
Leveraging ST’s advanced Trench-Gate Field-Stop High-Speed technology, the HB series has a minimal collector-current turn-off tail and very low saturation voltage, therefore minimizing energy losses during switching and start up. In addition, the technology is well-controlled, producing a tight distribution window of parameters, enhancing repeatability and simplifying system design.
ST’s HB series IGBTs enhance the energy efficiency of solar inverters, induction heaters, welders, uninterruptible power supplies, power-factor correction, and other high-frequency power converters. The extended voltage rating of 650V ensures at least 600V breakdown voltage in ambient temperatures down to -40°C, making the devices ideal for solar inverters marketed in colder climates. The maximum operating junction temperature of 175°C and wide Safe Operating Area (SOA) increase reliability and allow smaller heatsinks.
Options include maximum current ratings from 30A to 80A (at 100°C), a selection of popular power packages, and co-packed diode optimized for resonant or hard-switching circuits.
ST
www.st.com
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