The new M-series 650 V insulated-gate bipolar transistors (IGBTs) from STMicroelectronics offer designers a  way to increase the efficiency of HVAC motor drives, Uninterruptible Power Supplies, solar power converters and all power-conversion applications working up to 20 kHz in hard-switching circuit topologies. Built using ST’s third generation of trench-gate field-stop low-loss technology, the M-series IGBTs…

New S-series 1200 V IGBTs from STMicroelectronics are optimized for the lowest combined conduction and turn-off losses at switching frequencies up to 8 kHz, to increase the power-conversion efficiency of uninterruptible power supplies, solar generators, welders, industrial motor drives and similar equipment. The S series has the lowest saturation voltage among 1200 V IGBTs currently on…

STMicroelectronics has begun limited production of its EnFilm advanced rechargeable batteries that are less than 0.25mm thick. These paper-thin batteries free designers from the constraints of standard battery sizes and are ideal for use in powering the next generation of personal technology and Internet-of-Things devices. At just 220µm thick and measuring 25.7mm x 25.7mm, ST’s…

STMicroelectronics’ latest 1200V IGBTs leverage second-generation trench-gate field-stop high-speed technology to boost energy efficiency and ruggedness in applications such as solar inverters, welders, uninterruptible power supplies, and Power-Factor Correction (PFC) converters. ST’s new H series 1200V IGBTs have up to 15% lower turn-off losses and up to 30% lower turn-on losses. The saturation voltage (Vce(sat))…

A dual-configuration Schottky silicon-carbide (SiC) diodes from STMicroelectronics are the first such devices in the industry with a voltage rating of 650V per diode in a choice of common-cathode or series configurations allowing use in interleaved or bridgeless power-factor correction (PFC) circuits. ST is a leading innovator of SiC power semiconductors that have inherently higher…